Defects in p-doped bulk GaN crystals grown with Ga polarity

Journal of Crystal Growth

Volumn 281, Issue 1, 2005, Pages 125-134

  Liliental Weber, Z ^a   Tomaszewicz, T ^a   Zakharov, D ^a   O'Keefe, M A ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

A1. Volume defects; A2. Growth from high temperature solutions; B1. Nitrides

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; INTERFACES (MATERIALS); TRANSMISSION ELECTRON MICROSCOPY;

EPILAYERS; GROWTH FROM HIGH-TEMPERATURE SOLUTIONS; POLARITY; VOLUME DEFECTS;

GALLIUM NITRIDE;

EID: 20744459802     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.049     Document Type: Conference Paper

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