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Volumn 312, Issue 18, 2010, Pages 2530-2536

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

(9) Kumagai, Yoshinao a Enatsu, Yuuki a Ishizuki, Masanari a,b Kubota, Yuki b Tajima, Jumpei a Nagashima, Toru b Murakami, Hisashi a Takada, Kazuya b Koukitu, Akinori a

a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

b TOKUYAMA CORPORATION (Japan)

Author keywords

A1. Interfaces; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting aluminum compounds

Indexed keywords

A1. SUBSTRATES; A3. HYDRIDE VAPOR PHASE EPITAXY; B1. NITRIDES; B1. SAPPHIRE; HYDRIDE VAPOR PHASE EPITAXY;

ALUMINUM; ALUMINUM NITRIDE; CRYSTAL GROWTH; NITRIDES; PHASE INTERFACES; RESISTORS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR PHASE EPITAXY; VAPORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 77955421562 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.04.008 Document Type: Conference Paper

Times cited : (48)

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