Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Kamber, Derrick S ^a,b   Wu, Yuan ^a   Letts, Edward ^a,b   Denbaars, Steven P ^a,b   Speck, James S ^a,b   Nakamura, Shuji ^a,b   Newman, Scott A ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; DISLOCATION DENSITIES; LATERAL EPITAXIAL OVERGROWTH; SMOOTH SURFACE MORPHOLOGY;

ATOMIC FORCE MICROSCOPY; SILICON CARBIDE; SURFACE MORPHOLOGY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

EPITAXIAL GROWTH;

EID: 33947597669     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2716068     Document Type: Article

References (10)

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