Effect of substrate bias on AlN thin film preparation in shielded reactive vacuum arc deposition

Thin Solid Films

Volumn 386, Issue 2, 2001, Pages 276-280

  Takikawa, Hirofumi ^a   Kimura, Keisaku ^a   Miyano, Ryuichi ^a   Sakakibara, Tateki ^a   Bendavid, Avi ^b   Martin, Philip J ^b   Matsumuro, Akihito ^c   Tsutsumi, Koichi ^d  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b CSIRO   (Australia)

^c NAGOYA UNIVERSITY   (Japan)

^d J A Woollam Japan Corporation   (Japan)

Author keywords

AlN film; Bias; Film properties; Orientation; Shielded reactive vacuum arc deposition

Indexed keywords

ALUMINUM NITRIDE; DEPOSITION; FILM GROWTH; FILM PREPARATION; GLASS; HARDNESS; QUARTZ; REFRACTIVE INDEX; SUBSTRATES; THIN FILMS; VACUUM APPLICATIONS;

QUARTZ SUBSTRATES; SHIELDED REACTIVE VACUUM ARC DEPOSITION;

PROTECTIVE COATINGS;

EID: 0035874098     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01673-4     Document Type: Article

References (16)