Controlled formation of voids at the AlN/sapphire interface by sapphire decomposition for self-separation of the AlN layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Tajima, J ^a   Kubota, Y ^a   Ishizuki, M ^a,b   Nagashima, T ^b   Togashi, R ^a   Murakami, H ^a   Kumagai, Y ^a   Takada, K ^b   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b TOKUYAMA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; ALN-LAYER GROWN; CARRIER GAS; HEATING TIME; HYDRIDE VAPOR PHASE EPITAXY; LOW CONCENTRATIONS; PHOTOLUMINESCENCE PEAK; SAPPHIRE SUBSTRATES; THERMAL EXPANSION COEFFICIENTS; VOID SIZE;

HEATING; PHASE INTERFACES; THERMAL EXPANSION;

SAPPHIRE;

EID: 77955422822     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880854     Document Type: Article

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