In situ gravimetric monitoring of decomposition rate on surface of (101̄2) R-plane sapphire for high-temperature growth of nonpolar ain

Japanese Journal of Applied Physics

Volumn 47, Issue 5 PART 1, 2008, Pages 3434-3437

  Akiyama, Kazuhiro ^a   Murakami, Hisashi ^a   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Al2O3; AIN; Crystal orientation; High temperature; Nitrides; Sapphire; Surface processes; Thermal stability; Vapor phase epitaxy

Indexed keywords

ACTIVATION ENERGY; CIVIL AVIATION; CRYSTAL GROWTH; CRYSTAL ORIENTATION; GASES; INERT GASES; NITRIDES; PHASE STABILITY; RATE CONSTANTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; THERMODYNAMIC STABILITY; VAPOR PHASE EPITAXY;

AIN; CARRIER GASES; DECOMPOSITION RATES; GREAT-ER; HIGH TEMPERATURE; IN-SITU; INERT CARRIER GASES; NONPOLAR; PLANE SAPPHIRES; SURFACE ORIENTATIONS; SURFACE PROCESSES; THERMAL STABILITIES; THERMAL STABILITY;

CORUNDUM;

EID: 55049134664     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3434     Document Type: Article

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