|
Volumn 206, Issue 6, 2009, Pages 1160-1163
|
Effect of aluminum carbide buffer layer on growth and self-separation of m-plane GaN by hydride vapor phase epitaxy
a
FURUKAWA CO LTD
(Japan)
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ALUMINUM CARBIDE;
DEPOSITION TEMPERATURES;
GAN CRYSTALS;
GAN LAYERS;
HYDRIDE VAPOR PHASE EPITAXY;
LOW TEMPERATURES;
M-PLANE;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
REPRODUCIBILITY;
SAPPHIRE SUBSTRATES;
ALUMINA;
ALUMINUM;
BUFFER LAYERS;
CARBIDES;
CHEMICAL VAPOR DEPOSITION;
CORUNDUM;
CRYSTAL GROWTH;
GALLIUM NITRIDE;
LAPPING;
SAPPHIRE;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING GALLIUM COMPOUNDS;
SUBSTRATES;
VAPOR PHASE EPITAXY;
VAPORS;
GALLIUM ALLOYS;
|
EID: 67649959779
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200880834 Document Type: Article |
Times cited : (7)
|
References (11)
|