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Volumn 206, Issue 6, 2009, Pages 1160-1163

Effect of aluminum carbide buffer layer on growth and self-separation of m-plane GaN by hydride vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM CARBIDE; DEPOSITION TEMPERATURES; GAN CRYSTALS; GAN LAYERS; HYDRIDE VAPOR PHASE EPITAXY; LOW TEMPERATURES; M-PLANE; METALORGANIC CHEMICAL VAPOR DEPOSITION; REPRODUCIBILITY; SAPPHIRE SUBSTRATES;

EID: 67649959779     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880834     Document Type: Article
Times cited : (7)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.