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Volumn 108, Issue 1, 2010, Pages

Infrared study of the absorption edge of β-InN films grown on GaN/MgO structures

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; BINARY COMPOUNDS; BURSTEIN; FREE CARRIER CONCENTRATION; FREE ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENT; II-IV SEMICONDUCTORS; III-V COMPOUNDS; INN FILMS; LOW TEMPERATURES; OPTICAL ABSORPTION EDGE; OPTICAL STUDY; RENORMALIZATION EFFECTS; ROOM TEMPERATURE; TEMPERATURE COEFFICIENT; TRANSMITTANCE MEASUREMENTS; WURTZITES;

EID: 77955204301     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3456171     Document Type: Article
Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.