Bipolar mode Operation and scalability of double-gate capacitorless 1T-DRAM cells

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1743-1750

  Giusi, Gino ^a   Alam, Muhammad Ashraful ^b   Crupi, Felice ^a   Pierro, Silvio ^a  

^a UNIVERSITY OF CALABRIA   (Italy)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Band to band tunneling (BTBT); capacitorless 1T DRAM; device scaling; device simulation; dynamic random access memory (DRAM); impact ionization

Indexed keywords

BAND TO BAND TUNNELING; CAPACITOR-LESS; DEVICE SIMULATIONS; DRAM DEVICES; DYNAMIC RANDOM ACCESS MEMORY; DYNAMIC RANDOM ACCESS MEMORY (DRAM);

IMPACT IONIZATION; PARTICLE DETECTORS; SCALABILITY; STRONTIUM COMPOUNDS; TUNNELING (EXCAVATION);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 77955175464     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2050104     Document Type: Article

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