Quantum effects influence on thin silicon film capacitor-less DRAM performance

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2006, Pages 157-158

  Puget, Sophie ^a   Bossu, Germain ^a   Regnier, Arnaud ^b   Ranica, Rossella ^a   Villaret, Alexandre ^a   Masson, Pascal ^b   Ghibaudo, Gérard ^c   Mazoyer, Pascale ^a   Skotnicki, Thomas ^a  

^a STMICROELECTRONICS   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); DYNAMIC RANDOM ACCESS STORAGE; QUANTUM THEORY; SEMICONDUCTING SILICON; THIN FILMS;

QUANTUM EFFECTS; SILICON FILMS; UNDOPED SILICON FILMS;

CAPACITORS;

EID: 43749118944     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2006.284485     Document Type: Conference Paper

References (9)