Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

IBM Journal of Research and Development

Volumn 46, Issue 2-3, 2002, Pages 187-212

  Mandelman, Jack A ^a   Dennard, Robert H ^b   Bronner, Gary B ^a   DeBrosse, Jonh K ^a   Divakaruni, Rama ^a   Li, Yujun ^a   Radens, Carl J ^a  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; MICROELECTRONICS; MOSFET DEVICES; SILICON WAFERS; THRESHOLD VOLTAGE;

DYNAMIC RANDOM ACCESS MEMORY (DRAM) SCALING;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0036508259     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.462.0187     Document Type: Review

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