Epitaxial multi-component rare earth oxide for high-K application

Thin Solid Films

Volumn 515, Issue 16 SPEC. ISS., 2007, Pages 6512-6517

  Laha, Apurba ^a   Fissel, A ^a   Bugiel, E ^a   Osten, H J ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Epitaxy; High K; MBE; Oxide

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; GATE DIELECTRICS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SINGLE CRYSTALS;

CAPACITANCE EQUIVALENT OXIDE THICKNESS; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES; CRYSTALLINE OXIDES; LEAKAGE CURRENT DENSITY;

RARE EARTH COMPOUNDS;

EID: 34247542508     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.070     Document Type: Article

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