Charge localization in [1 1 2] Si/Ge and Ge/Si core-shell nanowires

Journal of Physics D: Applied Physics

Volumn 43, Issue 27, 2010, Pages

  Liu, Nuo ^a,b   Li, Yan Rong ^b   Lu, Ning ^a   Yao, Yong Xin ^a   Fang, Xiao Wei ^a   Wang, Cai Zhuang ^a   Ho, Kai Ming ^a  

^a IOWA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BULK CRYSTALLINE; CHARGE LOCALIZATION; CHARGE SEPARATIONS; CONDUCTION-BAND MINIMUM; CONFINEMENT EFFECTS; CORE-SHELL NANOWIRES; CORE/SHELL; FIRST-PRINCIPLES STUDY; HIGH-MOBILITY HETEROSTRUCTURES; HIGHER EFFICIENCY; HOLE GAS; IN-FIELD; NANO CHANNELS; QUANTUM WELL; SI/GE; SPATIAL SEPARATION; TYPE II; VALENCE-BAND MAXIMUMS;

ELECTRON GAS; ELECTRON MOBILITY; GERMANIUM; HETEROJUNCTIONS; HOLE MOBILITY; NANOWIRES;

DENSITY FUNCTIONAL THEORY;

EID: 77953887433     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/27/275404     Document Type: Article

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