InP nanostructures formed in GaP-based nanowires grown on Si(1 1 1) substrates

Journal of Crystal Growth

Volumn 310, Issue 12, 2008, Pages 2966-2969

  Tateno, K ^a   Zhang, G ^a   Nakano, H ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

A1. Crystal structure; A3. Vapor phase epitaxy; B1. Nanowire; B2. Semiconducting III V materials

Indexed keywords

GALLIUM COMPOUNDS; INDIUM COMPOUNDS; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

GAP NANOWIRES; INP NANOSTRUCTURES; SEMICONDUCTING III-V MATERIALS;

NANOWIRES;

EID: 44149097592     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.03.001     Document Type: Article

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