High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si

Optics Letters

Volumn 31, Issue 17, 2006, Pages 2565-2567

  Okyay, Ali K ^a   Nayfeh, Ammar M ^a   Saraswat, Krishna C ^a   Yonehara, Takao ^b   Marshall, Ann ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DARK CURRENTS; HYDROGEN ANNEALING; LATTICE MISMATCH; METAL SEMICONDUCTOR;

ANNEALING; GROWTH (MATERIALS); HYDROGEN; MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE ROUGHNESS;

PHOTODETECTORS;

EID: 33750494545     PISSN: 01469592     EISSN: None     Source Type: Journal    
DOI: 10.1364/OL.31.002565     Document Type: Article

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