A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor

Nature Nanotechnology

Volumn 2, Issue 10, 2007, Pages 622-625

  Hu, Yongjie ^a   Churchill, Hugh O H ^b   Reilly, David J ^b   Xiang, Jie ^a   Lieber, Charles M ^a,b   Marcus, Charles M ^b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSPINNING; III-V SEMICONDUCTORS; NANOCRYSTALS; NANOWIRES; QUBITS; SPIN DYNAMICS;

BUILDING BLOCKES; CORE/SHELL NANOWIRES; DOUBLE QUANTUM DOTS; ELECTRON SPINS; HYPERFINE INTERACTIONS; INTEGRATED CHARGE; QUANTUM BIT (QUBIT); TUNABLE PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM; NANOWIRE; QUANTUM DOT; SILICON;

ARTICLE; PRIORITY JOURNAL; SENSOR;

EID: 34948889901     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2007.302     Document Type: Article

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