Exemplified calculation of stress migration in a 90nm node via structure

2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010

Volumn , Issue , 2010, Pages

  Weide Zaage, Kirsten ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

90NM NODE; DIRECT CALCULATION; GOOD CORRELATIONS; INDUCED STRESS; MASS FLUX; MIGRATION EFFECTS; REFERENCE TEMPERATURE; SIMULATION AND MEASUREMENT; STRESS DISTRIBUTION; STRESS MIGRATION; STRESS-FREE STATE;

MICROELECTRONICS; MICROSYSTEMS; NANOTECHNOLOGY; OPTICAL RESOLVING POWER; STRESS CONCENTRATION;

HEAT FLUX;

EID: 77953700601     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESIME.2010.5464542     Document Type: Conference Paper

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