Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead

Thin Solid Films

Volumn 516, Issue 2-4, 2007, Pages 449-453

  Wang, Robin C J ^a,b   Chang Liao, K S ^a   Wang, T K ^a   Lee, C C ^b   Lin, J H ^b   Oates, A S ^b   Lee, S C ^b   Wu, Kenneth ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Copper; Finite element analysis; Interconnect; Migration; Stress induced void

Indexed keywords

COMPUTER SIMULATION; FAILURE ANALYSIS; FINITE ELEMENT METHOD; MORPHOLOGY; OPTICAL INTERCONNECTS; STRESS ANALYSIS;

NARROW METAL FINGER CONNECTED; STRESS-INDUCED VOID;

COPPER COMPOUNDS;

EID: 36048963245     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.147     Document Type: Article

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