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Volumn 48, Issue 8-9, 2008, Pages 1393-1397

Determination of migration effects in Cu-via structures with respect to process-induced stress

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; FINITE ELEMENT METHOD;

EID: 50249128752     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.06.028     Document Type: Article
Times cited : (26)

References (10)
  • 1
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    • Orain S et al. FEM-based method to determine mechanical stress evolution during process flow in microelectronics. Application to stress-voiding. Thermal and mechanical simulation and experiments in microelectronics and microsystems. In: Proceedings of the EuroSimE; 2004. p. 47-52.
    • Orain S et al. FEM-based method to determine mechanical stress evolution during process flow in microelectronics. Application to stress-voiding. Thermal and mechanical simulation and experiments in microelectronics and microsystems. In: Proceedings of the EuroSimE; 2004. p. 47-52.
  • 2
    • 33751248750 scopus 로고    scopus 로고
    • Fiori V, Verrier S, et al. Thermo-mechanical modelling of process induced stress: layout effect on stress voiding phenomena. In: Eighth international works. Stress induced. Phenomena AIP; 2006. p. 254-61.
    • Fiori V, Verrier S, et al. Thermo-mechanical modelling of process induced stress: layout effect on stress voiding phenomena. In: Eighth international works. Stress induced. Phenomena AIP; 2006. p. 254-61.
  • 3
    • 0041692468 scopus 로고    scopus 로고
    • Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures
    • Dalleau D., Weide-Zaage K., and Danto Y. Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures. Microelectron Reliab 43 (2003) 1821-1826
    • (2003) Microelectron Reliab , vol.43 , pp. 1821-1826
    • Dalleau, D.1    Weide-Zaage, K.2    Danto, Y.3
  • 4
    • 0142186254 scopus 로고    scopus 로고
    • Stationary and dynamic analysis of failure locations and void formation in interconnects due to the different migration mechanisms
    • Weide-Zaage K., Dalleau D., and Yu X. Stationary and dynamic analysis of failure locations and void formation in interconnects due to the different migration mechanisms. Mater Sci Semicond Process 6 (2003) 85-92
    • (2003) Mater Sci Semicond Process , vol.6 , pp. 85-92
    • Weide-Zaage, K.1    Dalleau, D.2    Yu, X.3
  • 5
    • 50249104192 scopus 로고    scopus 로고
    • Gotuaco M, Lee PW, et al. The case for CVD low-k technology. Semiconductorfabtech 15, Sec. 6 "Wafer Processing"; 2001. p. 179-83.
    • Gotuaco M, Lee PW, et al. The case for CVD low-k technology. Semiconductorfabtech 15, Sec. 6 "Wafer Processing"; 2001. p. 179-83.
  • 6
    • 0037674766 scopus 로고    scopus 로고
    • Wang G, Groothuis S, Ho PS. Effect of packaging on interfacial cracking in Cu/low k damascene structures. In: Proceedings of conference on IEEE/ECTC; 2003. p. 727-32.
    • Wang G, Groothuis S, Ho PS. Effect of packaging on interfacial cracking in Cu/low k damascene structures. In: Proceedings of conference on IEEE/ECTC; 2003. p. 727-32.
  • 7
    • 50249153284 scopus 로고    scopus 로고
    • ANSYS®, Inc. Software products, multiphysics, ANSYS, Inc. Southpointe, Canonsburg (PA), USA.
    • ANSYS®, Inc. Software products, multiphysics, ANSYS, Inc. Southpointe, Canonsburg (PA), USA.
  • 8
    • 85001139408 scopus 로고    scopus 로고
    • Waeterloos JJ, Struyfield H. Integration feasibility of porous SiLk semiconductor dielectric. In: Proceedings of IEEE interconnect technology conference; 2001. p. 253-4.
    • Waeterloos JJ, Struyfield H. Integration feasibility of porous SiLk semiconductor dielectric. In: Proceedings of IEEE interconnect technology conference; 2001. p. 253-4.
  • 9
    • 50249157803 scopus 로고    scopus 로고
    • Black diamond - a low k dielectric for Cu damascene applications
    • MRS
    • Yau W.-F., Lu Y.-C., et al. Black diamond - a low k dielectric for Cu damascene applications. AMC (1999) 379-386 MRS
    • (1999) AMC , pp. 379-386
    • Yau, W.-F.1    Lu, Y.-C.2
  • 10
    • 0034498614 scopus 로고    scopus 로고
    • Development of a low-dielectric constant polymer for the fabrication of integrated circuit interconnect
    • Martin Steven J., Godschalk James P., et al. Development of a low-dielectric constant polymer for the fabrication of integrated circuit interconnect. Adv Mater 12 23 (2000) 1769-1778
    • (2000) Adv Mater , vol.12 , Issue.23 , pp. 1769-1778
    • Martin Steven, J.1    Godschalk James, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.