Effects of width scaling, length scaling, and layout variation on electromigrationin in dual damascene copper interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 671-672

  Lm, M H ^b,c   Chang, K P ^b   Su, K C ^b   Wang, Tahui ^a,c  

^a IEEE

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250709535     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251317     Document Type: Conference Paper

References (2)

1. M. H. Lin et al., in proc., IRPS., pp.229-233, 2004.
2. C.-K. Hu, et al., in proc., AMC., 1999.