Effects of length scaling on electromigration in dual-damascene copper interconnects

Microelectronics Reliability

Volumn 48, Issue 4, 2008, Pages 569-577

  Lin, M H ^a,b   Lin, M T ^b   Wang, Tahui ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; INTERCONNECTION NETWORKS; STATISTICAL METHODS; THRESHOLD VOLTAGE;

RESISTANCE DEGRADATION; TEMPERATURE DEPENDENT;

ELECTROMIGRATION;

EID: 42649086033     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.10.007     Document Type: Article

References (22)

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