Stress migration phenomenon in narrow copper interconnects

Journal of Applied Physics

Volumn 101, Issue 4, 2007, Pages

  Suzuki, T ^a   Nakamura, T ^a   Mizushima, Y ^a   Kouno, T ^a   Shiozu, M ^a   Otsuka, S ^a   Hosoda, T ^a   Matsuyama, H ^a   Shono, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FAILURE ANALYSIS; SCANNING TUNNELING MICROSCOPY; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

COPPER INTERCONNECTS; DIFFUSION MECHANISM; FAILURE RATE; STRESS MIGRATION (SM);

COPPER;

EID: 33847625874     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430695     Document Type: Article

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