Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6127-6130

  Chen, H W ^a   Chen, S Y ^a   Chen, K C ^a   Huang, H S ^a   Liu, C H ^b   Chiu, F C ^b   Liu, K W ^b   Lin, K C ^b   Cheng, L W ^c   Lin, C T ^c   Ma, G H ^c   Sun, S W ^c  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b MING CHUAN UNIVERSITY   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Carrier transportation; HfSiON; High ; Interface traps

Indexed keywords

ALUMINUM NITRIDE; ATOMIC LAYER DEPOSITION; CARRIER TRANSPORT; CHARGE COUPLED DEVICES; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; GATE DIELECTRICS; LEAKAGE CURRENTS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SILICATES; TEMPERATURE DISTRIBUTION; TRANSISTORS;

CAPTURE CROSS SECTIONS; CARRIER TRANSPORTATION; ELECTRICAL CHARACTERIZATION; EQUIVALENT OXIDE THICKNESS; HFSION; INTERFACE TRAPS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; TEMPERATURE DEPENDENCE;

HAFNIUM COMPOUNDS;

EID: 45049083372     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.196     Document Type: Article

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