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Volumn 19, Issue 4, 2001, Pages 1947-1952

Behavior of ultrathin [formula omitted] films in very high electric fields: Scanning tunneling microscope-induced void formation and dielectric breakdown

Author keywords

Al2O3

Indexed keywords


EID: 77952989880     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.1333088     Document Type: Conference Paper
Times cited : (10)

References (42)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.