Dielectric breakdown of silicon oxide studied by scanning probe microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 1884-1888

  Yasue, Takao ^a   Yoshida, Yoshiko ^a   Koyama, Hiroshi ^a   Kato, Tadao ^a   Nishioka, Tadashi ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b Ryoden Semiconduct Syst Eng Corp   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001088886     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589572     Document Type: Article

References (14)

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