Dielectric breakdown I: A review of oxide breakdown

Microelectronics Journal

Volumn 27, Issue 7, 1996, Pages 611-622

  Verweij, J F ^a   Klootwijk, J H ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; INTEGRATED CIRCUIT TESTING; OXIDES; SEMICONDUCTING SILICON; THIN FILMS;

DIELECTRIC BREAKDOWN; THIN OXIDE LAYERS;

DIELECTRIC FILMS;

EID: 0030269157     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00104-2     Document Type: Article

References (30)

1. D.R. Wolters and J.J. van der Schoot, Dielectric breakdown in MOS devices, Part I: Defect-related and intrinsic breakdown, Philips J. Res., 40 (1985) 115.
2. A. Martin, P. O'Sullivan and A. Mathewson, Comparison of interpolysilicon oxide lifetime using ramped and constant voltage measurements, Proc. 5th European Symp. on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 94, Glasgow, 4-7 Oct. 1994, pp. 163-168.
3. J.F. Verweij and D.R. Wolters, Breakdown fields in thin oxide layers, in J.J. Simone and J. Buxo (eds.), Insulating Films on Semiconductors, North-Holland, Amsterdam, 1986, pp. 125-132.
4. D.R. Wolters and J.J. van der Schoot, Dielectric breakdown in MOS devices, Part II: Conditions for the intrinsic breakdown, Philips J. Res., 40 (1985) 137.
5. 2, North-Holland, Amsterdam, in preparation.
6. 2, J. Appl. Phys., 49 (1978) 2478-2489.
7. R.H. Fowler and L. Nordheim, Electron emission in intense electric fields, Proc. R. Soc., 119 (1928) 173.
8. Y. Uraoka, N. Tsutsu, T. Motii, Y. Nakata and H. Esaki, Evaluation technique of gate oxide reliability with electrical and optical measurements, Proc. IEEE 1989 Int. Conf. on Microelectronic Test Structures, Vol. 2, 1989, pp. 97-102.
9. 2 at very low voltages, Proc. Int. Reliab. Phys. Symp. 1994, 1994, p. 126.
10. 2 layers, Rep. Prog. Phys., 53 (1990) 1297-1331.
11. 2 films thermally grown on a heavily doped Si substrate, characterisation and modelling, IEEE Trans. Electron Devices, 34 (1987) 1540.
12. R. Moazzami, J.C. Lee and C. Hu, Temperature acceleration of time-dependent dielectric breakdown, IEEE Trans. Electron Devices, 36 (1989) 2462-2465.
13. R. Moazzami, J.C. Lee, I.C. Chen and C. Hu, Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown, 34th IEDM Digest Techn. Papers (1988) 710-713.
14. D. Arnold, E. Cartier and D.J. DiMaria, Theory of high-field electron transport and impact ionization in silicon dioxide, Phys. Rev. B, 49 (1994) 10278-10297.
15. 2 system generated by vacuum-ultraviolet irradiation, Appl. Phys. Lett., 65 (1994) 1-3.
16. D.J. DiMaria, Hole trapping, substrate currents and breakdown in thin silicon dioxide films, IEEE Electron Device Lett., 16 (1995) 184-186.
17. X. Gao, Influence of gate material on charge to breakdown in p-type Si MOS structure, Extended Abstracts, Spring Meet. Electrochem. Soc., San Francisco, Abstract 136, 1994, pp. 209-210.
18. M. Kerber and U. Schwalke, Interface degradation and dielectric breakdown of thin oxides due to homogeneous charge injection, Proc. Int. Reliab. Phys. Symp., 1989, pp. 17-21.
19. R.-P. Vollertsen and W. Abadeer, Upper voltage and temperature limitations of stress conditions for relevant dielectric breakdown projections, Proc. 5th Eur. Symp. ESREF 94, Glasgow, 4-7 Oct. 1994, pp. 551-556.
20. D.J. DiMaria, E. Cartier and D. Arnold, Impact ionization, trap creation, degradation and breakdown in silicon dioxide films on silicon, J. Appl. Phys., 73 (1993) 3367-3384.
21. M. Kerber, Entirely gate-surrounded MOS capacitor to study the intrinsic oxide quality, IEEE Trans. Electron Devices, ED-39 (1992) 2814-2816.
22. D.J. Dumin, S. Mopuri, S. Vanchinathan, R.S. Scott, R. Subramoniam and T.G. Lewis, High field emission related thin oxide wearout and breakdown, Proc. Int. Reliab. Phys. Symp., 1994, p. 143.
23. R.S. Scott, N.A. Dumin, T.W. Hughes, D.J. Dumin and B.T. Moore, Properties of high voltage stress generated traps in thin silicon oxides, Proc. Int. Reliab. Phys. Symp., 1995, p. 131.
24. 2 films, Thin Solid Films, 185 (1990) 347-362.
25. T. Poorter and D.R. Wolters, Intrinsic breakdown at near zero electric fields, in J.F. Verweij and D.R. Wolters (eds.), Insulating Films on Semiconductors, Elsevier Science, Amsterdam, 1983, pp. 266-269.
26. D.J. DiMaria, Stress induced leakage currents in thin oxides, in S. Cristoloveanu and N. Gillemot (eds.), Insulating Films on Semiconductors, Elsevier Science, Villard-de-Lans, 1995, pp. 63-67.
27. J. Suñé, M. Nafria and X. Aymerich, Reversible dielectric breakdown of thin gate oxides in MOS devices, Microelectron. Reliab., 33 (1993) 1031-1039.
28. J. Lee, I.C. Chen and C. Hu, Modelling and characterisation of gate oxide reliability, IEEE Transactions on Electron Devices, 35 (1988) 2268.
29. 2, Proc. Int. Reliab. Phys. Symp., 1994, pp. 120-125.
30. 2 films with bimodal failure populations, Proc. Int. Reliab. Phys. Symp., 1995, pp. 124-130.