Temperature-accelerated dielectric breakdown in ultrathin gate oxides

Applied Physics Letters

Volumn 74, Issue 24, 1999, Pages 3708-3710

  Chen, C C ^a   Chang, C Y ^a   Chien, C H ^a   Huang, T Y ^a   Lin, H C ^b   Liang, M S ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

CHARGE-TO-BREAKDOWN FIELDS;

GATES (TRANSISTOR);

EID: 0032620499     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123228     Document Type: Article

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