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Volumn 442, Issue 3, 1999, Pages 385-399

STM atomic-scale characterization of the γ′-Al22O3 film on Ni3Al(111)

(5) Addepalli, S G a Ekstrom, B a Magtoto, N P a Lin, J S a,b Kelber, J A a

a UNIVERSITY OF NORTH TEXAS (United States)

b Cherry Semiconductor Corp (United States)

Author keywords

Aluminum oxide (A12o3); Auger electron spectroscopy (AES); Interface; Low energy electron diffraction (LEED); Ni3Al(111); Scanning tunneling microscopy (STM)

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; NEGATIVE IONS; NICKEL COMPOUNDS; SCANNING TUNNELING MICROSCOPY; THERMAL EFFECTS;

INTERATOMIC SPACING;

ALUMINA;

EID: 0033337056 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/s0039-6028(99)00951-6 Document Type: Article

Times cited : (54)

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