Characterization of extrinsic oxide breakdown on thin dielectric oxide

IEICE Transactions on Electronics

Volumn E82-C, Issue 4, 1999, Pages 589-592

  Shiga, Katsuya ^a   Komoru, Junko ^a   Katsumata, Masafumi ^a   Teramoto, Akinobu ^a   Mashiko, Yoji ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Activation energy; Extrinsic oxide breakdown; Oxide reliability; TDDB; Thin oxide

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); MOSFET DEVICES; OXIDES; RELIABILITY; THIN FILMS;

EXTRINSIC OXIDE BREAKDOWN; INTRINSIC BREAKDOWN; THIN DIELECTRIC OXIDE; TIME DEPENDENT DIELECTRIC BREAKDOWN;

INTEGRATED CIRCUIT TESTING;

EID: 0033311438     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

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