SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics

Volumn 49, Issue 5 PART 1, 2010, Pages 0562031-05620311

Model for bias frequency effects on plasma-damaged layer formation in Si substrates

(5) Eriguchi, Koji a Nakakubo, Yoshinori a Matsuda, Asahiko a Takao, Yoshinori a Ono, Kouichi a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS CONFIGURATION; BIAS FREQUENCY; DAMAGED LAYERS; DEFECT SITES; DISTRIBUTION PROFILES; ENERGY DEPENDENT; EXPERIMENTAL DATA; EXPERIMENTAL OBSERVATION; HIGH ENERGY; INCIDENT IONS; INDUCTIVELY COUPLED PLASMA REACTOR; ION ENERGY DISTRIBUTION FUNCTIONS; LAYER FORMATION; MODEL PREDICTION; PLASMA PROCESSING; POWER-LAW DEPENDENCES; RF BIAS; SI SUBSTRATES; SIMPLIFIED MODELS; STOPPING POWER;

DISTRIBUTION FUNCTIONS; ELECTROMAGNETIC INDUCTION; HIGH ENERGY PHYSICS; INDUCTIVELY COUPLED PLASMA; IONIZATION; IONS; PLASMA APPLICATIONS;

ION BOMBARDMENT;

EID: 77952696058 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.056203 Document Type: Article

Times cited : (16)

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