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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 16, 2000, Pages 11219-11224

Stress relaxation in a-Si induced by ion bombardment

(2) Koster, M a Urbassek, H M a

a Rheinland Pfälzische Technische Universität Kaiserslautern Landau (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ION; SILICON;

ARTICLE; ATOM; MOLECULAR DYNAMICS; SIMULATION; STRESS;

EID: 0034667145 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.11219 Document Type: Article

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.