General synthesis of manganese-doped II-VI and III-V semiconductor nanowires

Nano Letters

Volumn 5, Issue 7, 2005, Pages 1407-1411

  Radovanovic, Pavle V ^a   Barrelet, Carl J ^a   Gradečak, Silvija ^a   Qian, Fang ^a   Lieber, Charles M ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE EMISSION; METAL IONS; NANOCLUSTERS; SPINTRONICS;

CRYSTAL STRUCTURE; GALLIUM NITRIDE; MANGANESE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

NANOSTRUCTURED MATERIALS;

MANGANESE; NANOTUBE; ZINC OXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRICITY; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOCHEMISTRY; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC WIRING; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MANGANESE; MATERIALS TESTING; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; PHOTOCHEMISTRY; SEMICONDUCTORS; ZINC OXIDE;

EID: 23144452032     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl050747t     Document Type: Article

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