Comprehensive compact models for the circuit simulation of multichip power modules

IEEE Transactions on Power Electronics

Volumn 25, Issue 5, 2010, Pages 1251-1264

  Castellazzi, Alberto ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Diodes; Electromagnetic effects; Electrothermal effects; Insulated gate bipolar transistor (IGBT); Modeling; Power semiconductor devices; Simulation

Indexed keywords

APPLICATION SCENARIO; BEHAVIORAL DESCRIPTIONS; COMPACT MODEL; COMPUTATIONAL EFFORT; DEVICE MODELS; ELECTRO-THERMAL EFFECTS; ELECTROMAGNETIC EFFECTS; ELECTROMAGNETIC PHENOMENA; EQUIVALENT MODEL; FINITE DIFFERENCE; INSULATED GATE BIPOLAR TRANSISTOR MODULES; LUMPED ELEMENT; MODEL DEVELOPMENT; MODELING; MODELING POWER; MULTI-CHIP; MULTICHIP POWER MODULE; NUMERICAL SIMULATION; PARALLEL DEVICES; PARASITIC ELEMENT; POWER MODULE; RAILWAY TRACTION; SELF-HEATING EFFECT; SEMICONDUCTOR PHYSICS; SIMULATION EXAMPLE; STRUCTURAL ASSEMBLIES; THERMAL PHENOMENA;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; CHIP SCALE PACKAGES; CIRCUIT SIMULATION; ELECTROMAGNETISM; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MAGNETOELECTRIC EFFECTS; MODELS; MULTICHIP MODULES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SWITCHES; THREE DIMENSIONAL;

SEMICONDUCTOR DIODES;

EID: 77952148799     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2036728     Document Type: Article

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