Integrated compact modelling of a planar-gate non-punch-through 3.3kV-1200A IGBT module for insightful analysis and realistic interpretation of the failure mechanisms

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 133-136

  Castellazzi, A ^a   Ciappa, M ^a   Fichtner, W ^a   Urresti Ibanez J ^b   Mermet Guyennet, M ^b  

^a ETH ZURICH   (Switzerland)

^b ALSTOM   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ELECTRIC INVERTERS; ELECTRIC TRACTION; FAILURE ANALYSIS; MULTICHIP MODULES; THERMAL EFFECTS;

ELECTROTHERMAL EFFECTS; TRACTION INVERTERS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 39749162141     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294950     Document Type: Conference Paper

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