Reliability analysis and modeling of Power MOSFETs in the 42-V-PowerNet

IEEE Transactions on Power Electronics

Volumn 21, Issue 3, 2006, Pages 603-612

  Castellazzi, Alberto ^a   Gerstenmaier, York C ^b   Kraus, Rainer ^c   Wachutka, Gerhard K M ^d  

^a ETH ZURICH   (Switzerland)

^b SIEMENS AG   (Germany)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^d TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

Electrothermal effects; Modeling; Power metal oxide semiconductor field effect transistors (MOSFETs); Reliability

Indexed keywords

COMPUTER SIMULATION; HEATING; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; MOSFET DEVICES; MULTICHIP MODULES; RELIABILITY;

CIRCUIT SIMULATION; MULTICHIP ASSEMBLY; MUTUAL HEATING EFFECT; RELIABILITY ANALYSIS; THERMAL-MODELING APPROACH;

POWER ELECTRONICS;

EID: 33646519186     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2006.872382     Document Type: Article

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