Experimental study on plasma engineering in 6500V IGBTs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2000, Pages 37-40

  Wikstrom T ^a   Bauer, F ^a   Linder, S ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC LOSSES; ELECTRIC PROPERTIES; PLASMAS; SEMICONDUCTOR DEVICE STRUCTURES; THYRISTORS;

PLASMA ENGINEERING; PUNCH-THROUGH APPROACH; SAFE OPERATING AREA;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034447123     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. High-power hard-driven GTO module for 4.5kV/3kA snubber less operation
2. 6.5kV IGBT Modules
3. 500-V n-channel insulated-gate bipolar transistor with a trench gate structure
4. A 4500V injection enhanced Insulated Gate Bipolar Transistor (IEGT) operating in a mode similar to a thyristor
5. A novel high-conductivity IGBT (HiGT) with a short circuit capability
6. Analysis on device structures for next generation IGBT
7. Design considerations and characteristics of rugged punchthrough (PT) IGBTs with 4.5kV blocking capability