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Journal of the Electrochemical Society

Volumn 157, Issue 5, 2010, Pages

The growth of GaN nanorods with different temperature by molecular beam epitaxy

(3) Hsu, Kuang Yuan a Wang, Cheng Yu a Liu, Chuan Pu a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER; GAN NANORODS; GROWTH OF GAN; LOW DENSITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SI (1 1 1);

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM WIRES;

NANORODS;

EID: 77951185811 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3355902 Document Type: Article

Times cited : (11)

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