Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy

Nanotechnology

Volumn 19, Issue 47, 2008, Pages

  Park, Young S ^a   Kang, Tae W ^a   Taylor, R A ^b  

^a Dongguk University   (South Korea)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; ELECTROMAGNETIC WAVE EMISSION; EMISSION SPECTROSCOPY; EXCITONS; GALLIUM NITRIDE; LIGHT EMISSION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANORODS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS;

AVERAGE DIAMETERS; BLUESHIFTED; DONOR BOUND EXCITONS; EMISSION LINES; FREE EXCITONS; GAN NANORODS; MOLECULAR-BEAM EPITAXIES; PHOTOLUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE SPECTRUMS; QUANTUM SIZE EFFECTS; SI(111); SI(111) SUBSTRATES; SPECTRAL OVERLAPS;

GALLIUM ALLOYS;

GALLIUM; NANOROD; NITROGEN; SILICON DERIVATIVE;

ARTICLE; BEHAVIOR; DONOR; ENERGY; FIELD EMISSION; MOLECULAR MECHANICS; PARTICLE SIZE; PHOTOLUMINESCENCE; PRIORITY JOURNAL; QUANTUM CHEMISTRY; SPECTRUM; TEMPERATURE;

EID: 58149229413     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/47/475402     Document Type: Article

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