Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1879-1882

  Ishizawa, Shunsuke ^a,b   Kikuchi, Akihiko ^a,b   Kishino, Katsumi ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH PROCESS; LIFT-OFF PROCESS; NANO PATTERN; NANO-COLUMNS; NANOCOLUMN; RF PLASMA; SELECTIVE AREA GROWTH; SELECTIVE GROWTH; SI(111) SUBSTRATE; SUBSTRATE SURFACE; TRIANGULAR LATTICE;

ALUMINUM; CRYSTAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAMS; SEMICONDUCTOR GROWTH;

GALLIUM ALLOYS;

EID: 56449092286     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778730     Document Type: Conference Paper

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