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Volumn 94, Issue 24, 2009, Pages

Extracting the Richardson constant: IrOx /n-ZnO Schottky diodes

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CURRENT VOLTAGE; EXPECTED VALUES; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHT INHOMOGENEITIES; SCHOTTKY DIODES; TEST CASE; ZNO;

EID: 67649207971     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3156031     Document Type: Article
Times cited : (38)

References (11)
  • 4
    • 3342986527 scopus 로고
    • 0163-1829,. 10.1103/PhysRevB.45.13509
    • R. T. Tung, Phys. Rev. B 0163-1829 45, 13509 (1992). 10.1103/PhysRevB.45. 13509
    • (1992) Phys. Rev. B , vol.45 , pp. 13509
    • Tung, R.T.1
  • 6
    • 0000113985 scopus 로고    scopus 로고
    • 24th Conference on Physical Chemistry of Semiconductor Interfaces, Vol.,.
    • R. F. Schmitsdorf, T. U. Kampen, and W. Mönch, 24th Conference on Physical Chemistry of Semiconductor Interfaces 1997, Vol. 15, p. 1221.
    • (1997) , vol.15 , pp. 1221
    • Schmitsdorf, R.F.1    Kampen, T.U.2    Mönch, W.3
  • 8
    • 0000580593 scopus 로고    scopus 로고
    • 0021-8979,. 10.1063/1.366370
    • S. Chand and J. Kumar, J. Appl. Phys. 0021-8979 82, 5005 (1997). 10.1063/1.366370
    • (1997) J. Appl. Phys. , vol.82 , pp. 5005
    • Chand, S.1    Kumar, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.