Improvement of stability in ZnO TFT under bias stress

Digest of Technical Papers - SID International Symposium

Volumn 38, Issue 1, 2007, Pages 237-240

  Hwang, Chi Sun ^a   Park, Sang Hee Ko ^a   Lee, Jeong Ik ^a   Chung, Sung Mook ^a   Yang, Yong Suk ^a   Do, Lee Mi ^a   Chu, Hye Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRIC CURRENTS; THERMODYNAMIC STABILITY; ZINC OXIDE;

ACTIVE CHANNEL; BIAS STRESS;

THIN FILM TRANSISTORS;

EID: 34547916520     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.2785273     Document Type: Conference Paper

References (5)

1. J. F. Wager, "Transparent Electronics", Science 300, 1245 (2003).
2. Sang-Hee Ko Park, Chi-Sun Hwang, Ho-Sang Kwack, Seung-Youl Kang, Jin-Hong Lee, and Hye Yong Chu, "Characteristics of ZnO Thin Film by means of ALD for the Application of Tranparent TFT", IMID'05, 1564 (2005).
3. Chi-Sun Hwang, Sang-Hee Ko Park, and Hye Yong Chu, " ZnO TFT Fabricated at low Temperature for Applications of Active-matrix Display", IDW'05, 1149 (2005).
4. Sang-Hee Ko Park, Chi-Sun Hwang, H.-S. Kwack, J.I. Lee, and H. Y. Chu, " Transparent ZnO Thin Film Transistor Array by means of Plasma Enhanced Atomic Layer Deposition", IMID'06, 601 (2006).
5. C. G. Van de Walle, " Hydrogen as a Cause of Doping in Zinc Oxide", Phys. Rev. Lett. 85, 1012 (2000)