Low-voltage ZnO thin-film transistors with high- K Bi 1.5Zn 1.0Nb 1.5O 7 gate insulator for transparent and flexible electronics

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Kim, Il Doo ^a,b   Choi, Yongwoo ^a   Tuller, Harry L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CHANNELS; FILM THICKNESS; GATE CAPACITANCE; GATE INSULATORS;

BISMUTH COMPOUNDS; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; ELECTRONICS ENGINEERING; ELECTRONS; FIELD EFFECT TRANSISTORS; PERMITTIVITY; SINGLE CRYSTALS; TRANSPARENCY; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 23744515183     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1993762     Document Type: Article

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