Studies of carbon behaviour on GaN surface in ultra high vacuum (UHV)

Surface and Interface Analysis

Volumn 37, Issue 13, 2005, Pages 1158-1160

  Diale, M ^a   Auret, F D ^a   Odendaal, R Q ^a   Roos, W D ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b UNIVERSITY OF THE FREE STATE   (South Africa)

Author keywords

Carbon; GaN; UHV

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBIDES; CARBON; CRYSTALS; GALLIUM NITRIDE; GRAPHITE; HEATING; STOICHIOMETRY; ULTRAHIGH VACUUM;

CHEMICAL STATE; CONTAMINATION-FREE SAMPLES; UHV;

SURFACE CHEMISTRY;

EID: 29044438702     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.2127     Document Type: Article

References (12)

1. Pearton SJ, Ren F, Zhang AP, Lee KP. Mater. Res. Eng. 2000; R30: 35.
2. Morkoc H. Mater. Sci. Eng. 2001; R33:135.
3. Liu QZ, Lau SS. Solid-State Electron. 1998; 42: 677.
4. Quirk M, Serda J. Semiconductor Manufacturing Technology. Prentice Hall: Upper Saddle River, NJ, 2001.
5. Lee KN, Donovan SM, Gila B, Overberg M, Mackenzie JD, Abernathy CR, Wilson RG. J. Electrochem. Soc. 2000; 147: 3087.
6. McGinnis AJ, Thomson D, Davis RF, Chen E, Michel A, Lamb HH. J. Crystal Growth 2001; 222: 452.
7. Huh C, Kim S-W, Kim H-M, Kim D-J, Park S-J. Appl. Phys. Lett. 2001; 73:1942.
8. Liu Chang, Kang Junyong. Opt. Mater. 2003; 23:164.
9. Nienhaus H, Schepers C, Grabowski SP, Mönch W. Appl. Phys. Lett. 2000; 77: 403.
10. Smith LL, King SW, Nemanich RJ, Davis RF. J. Electron. Mater. 1996; 25: 805.
11. King SW, Barnak JP, Bremster MD, Tracey KM, Ronning C, Davis RF, Nemanich RJ. J. Appl. Phys. 1998; 84: 5248.
12. Lee KN, Donovan SM, Gila B, Overberg M, Mackenzie JD, Abernathy CR, Wilson RG. J. Electrochem. Soc. 2000; 147: 3087.