Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts

Electronics Letters

Volumn 43, Issue 25, 2007, Pages 1466-1467

  Pei, Y ^a   Recht, F ^a   Fichtenbaum, N ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ELECTRIC POWER MEASUREMENT; IONS; OHMIC CONTACTS; SILICON;

DRAIN BIAS; SILICON IONS; SUBMICRON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 36949032942     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072969     Document Type: Article

References (10)

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