High-performance poly-Si TFTs with Pr2O3 gate dielectric

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 96-98

  Chang, Chia Wen ^a   Deng, Chih Kang ^a   Huang, Jiun Jia ^a   Chang, Hong Ren ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

High gate dielectric; Praseodymium oxide (Pr2O3); Thin film transistors (TFTs)

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; GATE DIELECTRICS; POLYSILICON; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

CAPACITANCE DENSITY; PRASEODYMIUM OXIDE; TETRAETHOXYSILANE GATE DIELECTRIC;

THIN FILM TRANSISTORS;

EID: 37549052104     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911614     Document Type: Article

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