Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

IEEE Electron Device Letters

Volumn 29, Issue 2, 2008, Pages 171-173

  Ma, Ming Wen ^a   Chen, Chih Yang ^a   Su, Chun Jung ^a   Wu, Woei Cherng ^a   Wu, Yi Hong ^b   Kao, Kuo Hsing ^a   Chao, Tien Sheng ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

High ; Hot carrier stress (HCS); Low temperature poly Si thin film transistors (LTPS TFTs); Positive bias temperature instability (PBTI)

Indexed keywords

GATE DIELECTRICS; GRAIN BOUNDARIES; HOT CARRIERS; POLYSILICON; SEMICONDUCTING SILICON; STRESSES; THERMODYNAMIC STABILITY;

GATE BIAS STRESS; HOT CARRIER STRESS; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI);

THIN FILM TRANSISTORS;

EID: 39549087202     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.914091     Document Type: Article

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