Blocking of indium incorporation by antimony in III-V-Sb nanostructures

Nanotechnology

Volumn 21, Issue 14, 2010, Pages

  Sanchez, A M ^a,b   Beltran, A M ^a   Beanland, R ^b   Ben, T ^a   Gass, M H ^c   De La Pea F ^d   Walls, M ^d   Taboada, A G ^e   Ripalda, J M ^e   Molina, S I ^a  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c DARESBURY LABORATORY   (United Kingdom)

^d UNIVERSITÉ PARIS SUD   (France)

^e INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY CONCENTRATION; BAND GAP ENGINEERING; CRITICAL LEVEL; DEVICE APPLICATION; VERY HIGH RESOLUTION;

INDIUM; NANOSTRUCTURES; SURFACE SEGREGATION;

ANTIMONY;

EID: 77949544592     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/14/145606     Document Type: Article

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