Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures

Microscopy of Semiconducting Materials 2003

Volumn , Issue , 2018, Pages 147-151

  Schowalter, M ^a   Rosenauer, A ^a   Gerthsen, D ^a   Grau, M ^b   Arnann, M C ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; GALLIUM ARSENIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

CONCENTRATION PROFILES; DIFFERENT THICKNESS; GAAS(1 0 0); GASB/GAAS; GROWTH INTERRUPTION; LATTICE FRINGES; QUANTITATIVE INVESTIGATION; STRAIN STATE ANALYSIS;

ANTIMONY COMPOUNDS;

EID: 85053323125     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1201/9781351074636     Document Type: Chapter

References (13)

1. Cunningham J, Dinu M, Shah J, Quochi F, Kilper D, Jan W, Williams M, Mills A and Henderson W 2001 J. Vac. Sci. Technol. B 19, 1948
2. Evans K R, Kaspi R, Ehret J E, Skowroński M and Jones C R 1995 J. Vac. Sci. Technol. B 13, 1820
3. Garcia J, Silveira J, Briones F 2000 Appi. Phys. Lett. 77, 409
4. Kaspi R and Evans K R 1997 J. Crystal Growth 175/176, 838
5. Ledentsov N, Bohrer J, Beer M, Heinrichsdorff F, Grundmann M and Bimberg D 1995 Phys. Rev. B 52, 14058
6. McCaffrey J 1991 Ultramicroscopy 51, 131
7. Moison J M, Guille C, Houzay F, Barthe F and Van Rompay M 1989 Phys. Rev. B 40, 6149
8. Muraki K, Fukatsu S, Shirakia Y and Ito R 1992 Appi. Phys. Lett. 61, 557
9. Nagle J, Landesman J P, Larive M, Mottet C and Bois P 1993 J Crystal Growth 127, 550
10. Rosenauer A and Gerthsen D 1999 Ultramicroscopy 76, 49
11. Rosenauer A and Gerthsen D 1998 Adv. Imaging Electron Phys. 107, 121
12. Suzuki K and Arakawa Y 1999 J. Crystal Growth 201/202, 1205
13. Toyoshima H, Niwa T, Yamazaki J and Okamoto A 1993 Appi. Phys. Lett. 63, 821