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Volumn 237-239, Issue 1 4 II, 2002, Pages 1471-1475
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Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: Characterization of stresses and chemical composition
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EPFL
(Switzerland)
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Author keywords
A1. Characterization; A1. Computer simulation; A1. Low dimensional structures; A1. Stresses; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials
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Indexed keywords
CHARACTERIZATION;
COMPUTER SIMULATION;
ELECTRON ENERGY LOSS SPECTROSCOPY;
EPITAXIAL GROWTH;
FINITE ELEMENT METHOD;
IMAGE ANALYSIS;
IMAGING TECHNIQUES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR QUANTUM WIRES;
STRESS ANALYSIS;
TRANSMISSION ELECTRON MICROSCOPY;
IMAGE CONTRASTS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
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EID: 0036531595
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)02297-7 Document Type: Article |
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Times cited : (18)
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References (10)
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