Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing

Applied Physics Letters

Volumn 69, Issue 20, 1996, Pages 3072-3074

  Kosogov, A O ^a,c   Werner, P ^a   Gosele U ^a   Ledentsov, N N ^b,c   Bimberg, D ^b   Ustinov, V M ^c   Egorov, A Yu ^c   Zhukov, A E ^c   Kop'ev, P S ^c   Bert, N A ^c   Alferov, Zh I ^c  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5544290474     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116843     Document Type: Article

References (21)

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